TY - JOUR
T1 - A high-performance organic lithium salt-doped OFET with the optical radical effect for photoelectric pulse synaptic simulation and neuromorphic memory learning
AU - Li, Yujiao
AU - He, Gang
AU - Wang, Wenhao
AU - Fu, Can
AU - Jiang, Shanshan
AU - Fortunato, Elvira
AU - Martins, Rodrigo
N1 - Funding Information:
This work is financially supported by the National Natural Science Foundation of China (Grant No. 11774001 and 52202156), The University Synergy Innovation Program of Anhui Province (GXXT-2022-012), Key Natural Science Research Projects in Colleges and Universities in Anhui Province (KJ2021A1088), Scientific Research Project of Colleges and Universities in Anhui Province (2022AH050113), and Postdoctoral Daily Public Start-Up Funds of Anhui University (S202418001/069).
Publisher Copyright:
© 2024 The Royal Society of Chemistry.
PY - 2024/8/12
Y1 - 2024/8/12
N2 - Simulation of synaptic characteristics is essential for the application of organic field effect transistors (OFETs) in neural morphology. Although excellent performance, including bias stability and mobility, as well as photoelectric pulse synaptic simulation, has been achieved in SiO2-gated OFETs with PDVT-10 as an organic channel, there are relatively few studies on photoelectric pulse synaptic simulation of electrolyte-gated OFETs based on environmentally friendly and low-voltage operation. Herein, synaptic transistors based on organic semiconductors are reported to simulate the photoelectric pulse response by developing solution-based organic semiconductor PDVT-10, and polyvinyl alcohol (PVA) with an electric double layer (EDL) effect to act as a channel and gate dielectric layer, respectively, and organic lithium salt-doped PVA is used to enhance the EDL effect. The presence of electrical pulses in doped devices not only achieves basic electrical synaptic characteristics, but also significantly realizes the long-term characteristics, pain perception, memory and sensitization applications. Furthermore, the introduction of photoinitiator molecules into the channel layer leads to improved photosynaptic performances by using light-induced free radicals, and the photoelectric synergistic effect has been actualized by introducing heterojunction architecture. This work provides promising prospects for achieving photoelectric pulse modulation based on organic synaptic devices, which shows great potential for the development of artificial intelligence.
AB - Simulation of synaptic characteristics is essential for the application of organic field effect transistors (OFETs) in neural morphology. Although excellent performance, including bias stability and mobility, as well as photoelectric pulse synaptic simulation, has been achieved in SiO2-gated OFETs with PDVT-10 as an organic channel, there are relatively few studies on photoelectric pulse synaptic simulation of electrolyte-gated OFETs based on environmentally friendly and low-voltage operation. Herein, synaptic transistors based on organic semiconductors are reported to simulate the photoelectric pulse response by developing solution-based organic semiconductor PDVT-10, and polyvinyl alcohol (PVA) with an electric double layer (EDL) effect to act as a channel and gate dielectric layer, respectively, and organic lithium salt-doped PVA is used to enhance the EDL effect. The presence of electrical pulses in doped devices not only achieves basic electrical synaptic characteristics, but also significantly realizes the long-term characteristics, pain perception, memory and sensitization applications. Furthermore, the introduction of photoinitiator molecules into the channel layer leads to improved photosynaptic performances by using light-induced free radicals, and the photoelectric synergistic effect has been actualized by introducing heterojunction architecture. This work provides promising prospects for achieving photoelectric pulse modulation based on organic synaptic devices, which shows great potential for the development of artificial intelligence.
UR - https://www.scopus.com/pages/publications/85194139717
U2 - 10.1039/d4mh00297k
DO - 10.1039/d4mh00297k
M3 - Article
C2 - 38787754
AN - SCOPUS:85194139717
SN - 2051-6347
VL - 11
SP - 3867
EP - 3877
JO - Materials Horizons
JF - Materials Horizons
IS - 16
ER -