A comparison of TFET rectifiers for RF energy harvesting applications

David Cavalheiro, Francesc Moll, Stanimir Valtchev

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this work the performance of Tunnel FET (TFET)-based rectifiers is explored for ultra-low power applications. At a device level, when the TFET is reverse-biased its current is characterized by reverse band-to-band tunneling and drift-diffusion carrier injection mechanism. This electrical characteristic may degrade the performance of conventional TFET rectifiers due to the losses resulting from the reverse conduction of the transistors during their off state. To combat this drawback, the presented work proposes new TFET-based rectifier topologies for RF-powered energy harvesting circuits that attenuate the reverse losses suffered by the transistors. The results compare three topologies for sub-μW power levels at two frequencies of operation: 915 MHz and 100 MHz.

Original languageEnglish
Title of host publicationProceedings - 2016 IEEE International Power Electronics and Motion Control Conference, PEMC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages14-19
Number of pages6
ISBN (Electronic)9781509017980
DOIs
Publication statusPublished - 2016
Event17th IEEE International Power Electronics and Motion Control Conference, PEMC 2016 - Varna, Bulgaria
Duration: 25 Sep 201628 Sep 2016

Conference

Conference17th IEEE International Power Electronics and Motion Control Conference, PEMC 2016
CountryBulgaria
CityVarna
Period25/09/1628/09/16

Keywords

  • Energy harvesting
  • RF Rectifier
  • Tunnel FET
  • Ultra-low power

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