Abstract
In this work the performance of Tunnel FET (TFET)-based rectifiers is explored for ultra-low power applications. At a device level, when the TFET is reverse-biased its current is characterized by reverse band-to-band tunneling and drift-diffusion carrier injection mechanism. This electrical characteristic may degrade the performance of conventional TFET rectifiers due to the losses resulting from the reverse conduction of the transistors during their off state. To combat this drawback, the presented work proposes new TFET-based rectifier topologies for RF-powered energy harvesting circuits that attenuate the reverse losses suffered by the transistors. The results compare three topologies for sub-μW power levels at two frequencies of operation: 915 MHz and 100 MHz.
Original language | English |
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Title of host publication | Proceedings - 2016 IEEE International Power Electronics and Motion Control Conference, PEMC 2016 |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 14-19 |
Number of pages | 6 |
ISBN (Electronic) | 9781509017980 |
DOIs | |
Publication status | Published - 2016 |
Event | 17th IEEE International Power Electronics and Motion Control Conference, PEMC 2016 - Varna, Bulgaria Duration: 25 Sept 2016 → 28 Sept 2016 |
Conference
Conference | 17th IEEE International Power Electronics and Motion Control Conference, PEMC 2016 |
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Country/Territory | Bulgaria |
City | Varna |
Period | 25/09/16 → 28/09/16 |
Keywords
- Energy harvesting
- RF Rectifier
- Tunnel FET
- Ultra-low power