A 2.3-dB NF CMOS low voltage LNA optimized for medical applications at 600MHz

João Pedro Abreu de Oliveira; João Carlos da Palma Goes; DEE Group Author

A 2.3-dB NF CMOS low voltage LNA optimized for medical applications at 600MHz

João Pedro Abreu de Oliveira, João Carlos da Palma Goes, DEE Group Author

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper it is presented a balun LNA, with voltage gain control that combines a common-gate and common-source stage, in which transistors biased in triode region replace the resistive loads. This last approach in conjunction with a dynamic threshold reduction technique allows a low supply voltage operation. Furthermore, a significant chip area reduction can be exploited by adopting an inductor-less configuration. Simulations results with a 130 nm CMOS technology show that the gain is up to 19.3 dB and the NF is below 2.3 dB. The total dissipation is 4 mW, leading to an FOM of 2.26 for 0.6 V supply.

Original language	English
Title of host publication	Proceedings of the 20th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 2013)
Pages	575-579
Publication status	Published - 1 Jan 2013
Event	MIXDES 2013: 20th International Conference Mixed Design of Integrated Circuits and Systems - Duration: 1 Jan 2013 → …

Conference

Conference	MIXDES 2013: 20th International Conference Mixed Design of Integrated Circuits and Systems
Period	1/01/13 → …

Keywords

DTMOS
balun
low voltage
low power

Cite this

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title = "A 2.3-dB NF CMOS low voltage LNA optimized for medical applications at 600MHz",

abstract = "In this paper it is presented a balun LNA, with voltage gain control that combines a common-gate and common-source stage, in which transistors biased in triode region replace the resistive loads. This last approach in conjunction with a dynamic threshold reduction technique allows a low supply voltage operation. Furthermore, a significant chip area reduction can be exploited by adopting an inductor-less configuration. Simulations results with a 130 nm CMOS technology show that the gain is up to 19.3 dB and the NF is below 2.3 dB. The total dissipation is 4 mW, leading to an FOM of 2.26 for 0.6 V supply.",

keywords = "DTMOS, low power, balun, low voltage, DTMOS, balun, low voltage, low power",

author = "Oliveira, {Jo{\~a}o Pedro Abreu de} and Goes, {Jo{\~a}o Carlos da Palma} and {DEE Group Author}",

note = "Sem PDF# national funds through FCT Portuguese Foundation for Science and Technology PEst-OE/EEI/UI0066/2011 PTDC/EEA-ELC/101421/2008. ; MIXDES 2013: 20th International Conference Mixed Design of Integrated Circuits and Systems ; Conference date: 01-01-2013",

year = "2013",

month = jan,

day = "1",

language = "English",

isbn = "978-83-63578-01-5",

pages = "575--579",

booktitle = "Proceedings of the 20th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 2013)",

}

Oliveira, JPAD , Goes, JCDP & DEE Group Author 2013, A 2.3-dB NF CMOS low voltage LNA optimized for medical applications at 600MHz. in Proceedings of the 20th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 2013)., 6613419, pp. 575-579, MIXDES 2013: 20th International Conference Mixed Design of Integrated Circuits and Systems, 1/01/13.

A 2.3-dB NF CMOS low voltage LNA optimized for medical applications at 600MHz. / Oliveira, João Pedro Abreu de ; Goes, João Carlos da Palma; DEE Group Author.
Proceedings of the 20th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 2013). 2013. p. 575-579 6613419.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Goes, João Carlos da Palma

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N2 - In this paper it is presented a balun LNA, with voltage gain control that combines a common-gate and common-source stage, in which transistors biased in triode region replace the resistive loads. This last approach in conjunction with a dynamic threshold reduction technique allows a low supply voltage operation. Furthermore, a significant chip area reduction can be exploited by adopting an inductor-less configuration. Simulations results with a 130 nm CMOS technology show that the gain is up to 19.3 dB and the NF is below 2.3 dB. The total dissipation is 4 mW, leading to an FOM of 2.26 for 0.6 V supply.

AB - In this paper it is presented a balun LNA, with voltage gain control that combines a common-gate and common-source stage, in which transistors biased in triode region replace the resistive loads. This last approach in conjunction with a dynamic threshold reduction technique allows a low supply voltage operation. Furthermore, a significant chip area reduction can be exploited by adopting an inductor-less configuration. Simulations results with a 130 nm CMOS technology show that the gain is up to 19.3 dB and the NF is below 2.3 dB. The total dissipation is 4 mW, leading to an FOM of 2.26 for 0.6 V supply.

KW - DTMOS

KW - low power

KW - balun

KW - low voltage

KW - DTMOS

KW - balun

KW - low voltage

KW - low power

M3 - Conference contribution

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BT - Proceedings of the 20th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 2013)

T2 - MIXDES 2013: 20th International Conference Mixed Design of Integrated Circuits and Systems

Y2 - 1 January 2013

ER -

A 2.3-dB NF CMOS low voltage LNA optimized for medical applications at 600MHz

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Keywords

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