A 2.3-dB NF CMOS low voltage LNA optimized for medical applications at 600MHz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper it is presented a balun LNA, with voltage gain control that combines a common-gate and common-source stage, in which transistors biased in triode region replace the resistive loads. This last approach in conjunction with a dynamic threshold reduction technique allows a low supply voltage operation. Furthermore, a significant chip area reduction can be exploited by adopting an inductor-less configuration. Simulations results with a 130 nm CMOS technology show that the gain is up to 19.3 dB and the NF is below 2.3 dB. The total dissipation is 4 mW, leading to an FOM of 2.26 for 0.6 V supply.
Original languageEnglish
Title of host publicationProceedings of the 20th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 2013)
Pages575-579
Publication statusPublished - 1 Jan 2013
EventMIXDES 2013: 20th International Conference Mixed Design of Integrated Circuits and Systems -
Duration: 1 Jan 2013 → …

Conference

ConferenceMIXDES 2013: 20th International Conference Mixed Design of Integrated Circuits and Systems
Period1/01/13 → …

Keywords

  • DTMOS
  • balun
  • low voltage
  • low power

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