A 130 nm CMOS Power Management Unit with a Multi-Ratio Core SC DC-DC Converter for a Supercapacitor Power Supply

Ricardo Madeira, Joao P. Oliveira, Nuno Paulino

Research output: Contribution to journalArticle

Abstract

In recent years Switched Capacitor DC-DC Converters have been gaining interest as an attractive solution for implementing power management solutions in small scale low power systems, such as Internet of Things remote sensor nodes. Since SC circuits can be fully integrated in bulk CMOS technology, the number of external components is reduced, thus decreasing both the production costs and the volume of the system. This paper presents a power management unit using a multi-ratio SC DC-DC converter, and its controlling circuits, designed in a 130 nm bulk CMOS technology occupying an area of 0.138 mm². It provides a constant supply voltage of 0.9 V for a maximum output power of 1 mW, from an input supercapacitor voltage ranging from 1.2 V to 2.3 V. The measured results show a conversion efficiency peak of 80.4%.

Original languageEnglish
Pages (from-to)1445-1449
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Volume65
Issue number10
DOIs
Publication statusAccepted/In press - 27 Jul 2018

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DC-DC converters
Networks (circuits)
Electric potential
Sensor nodes
Conversion efficiency
Capacitors
Costs
Supercapacitor
Power management
Internet of things

Keywords

  • Power Management Unit
  • SC DC-DC Converters
  • Supercapacitor.

Cite this

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abstract = "In recent years Switched Capacitor DC-DC Converters have been gaining interest as an attractive solution for implementing power management solutions in small scale low power systems, such as Internet of Things remote sensor nodes. Since SC circuits can be fully integrated in bulk CMOS technology, the number of external components is reduced, thus decreasing both the production costs and the volume of the system. This paper presents a power management unit using a multi-ratio SC DC-DC converter, and its controlling circuits, designed in a 130 nm bulk CMOS technology occupying an area of 0.138 mm². It provides a constant supply voltage of 0.9 V for a maximum output power of 1 mW, from an input supercapacitor voltage ranging from 1.2 V to 2.3 V. The measured results show a conversion efficiency peak of 80.4{\%}.",
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