3-phase model for VIS/NIR μC-Si: H p-i-n detectors

M. Vieira, Miguel Fernandes, A. Fantoni, A. Maçarico, R. Schwarz

Research output: Contribution to journalConference articlepeer-review


The spectral response and the photocurrent delivered by entirely microcrystalline p-i-n-Si:H detectors are analysed under different applied bias and light illumination conditions. The spectral response and the internal collection depend not only on the energy range but also on the illumination side. Under 〈p〉- and 〈n〉-side irradiation, the internal collection characteristics have an atypical shape. It is high for applied bias and lower than the open circuit voltage, shows a steep decrease near the open circuit voltage (higher under 〈n〉-side illumination) and levels off for higher voltages. Additionally, the numerical modeling of the VIS/NIR detector, based on the band discontinuities near the grain boundaries and interfaces, complements the study and gives insight into the internal physical process.

Original languageEnglish
Pages (from-to)175-180
Number of pages6
JournalSensors and Actuators A: Physical
Issue number1
Publication statusPublished - 25 Aug 2000
EventProceedings of Eurocensorsn XIII - The Hague, Neth
Duration: 12 Sept 199915 Sept 1999


  • Computer simulation
  • Photocurrents
  • Irradiation
  • Grain boundaries
  • Microcrystalline detectors
  • Spectral response
  • Photodetectors


Dive into the research topics of '3-phase model for VIS/NIR μC-Si: H p-i-n detectors'. Together they form a unique fingerprint.

Cite this