Abstract
The spectral response and the photocurrent delivered by entirely microcrystalline p-i-n-Si:H detectors are analysed under different applied bias and light illumination conditions. The spectral response and the internal collection depend not only on the energy range but also on the illumination side. Under 〈p〉- and 〈n〉-side irradiation, the internal collection characteristics have an atypical shape. It is high for applied bias and lower than the open circuit voltage, shows a steep decrease near the open circuit voltage (higher under 〈n〉-side illumination) and levels off for higher voltages. Additionally, the numerical modeling of the VIS/NIR detector, based on the band discontinuities near the grain boundaries and interfaces, complements the study and gives insight into the internal physical process.
Original language | English |
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Pages (from-to) | 175-180 |
Number of pages | 6 |
Journal | Sensors and Actuators A: Physical |
Volume | 85 |
Issue number | 1 |
DOIs | |
Publication status | Published - 25 Aug 2000 |
Event | Proceedings of Eurocensorsn XIII - The Hague, Neth Duration: 12 Sept 1999 → 15 Sept 1999 |
Keywords
- Computer simulation
- Photocurrents
- Irradiation
- Grain boundaries
- Microcrystalline detectors
- Spectral response
- Photodetectors