3-phase model for VIS/NIR μC-Si: H p-i-n detectors

M. Vieira, Miguel Fernandes, A. Fantoni, A. Maçarico, R. Schwarz

Research output: Contribution to journalConference article

Abstract

The spectral response and the photocurrent delivered by entirely microcrystalline p-i-n-Si:H detectors are analysed under different applied bias and light illumination conditions. The spectral response and the internal collection depend not only on the energy range but also on the illumination side. Under 〈p〉- and 〈n〉-side irradiation, the internal collection characteristics have an atypical shape. It is high for applied bias and lower than the open circuit voltage, shows a steep decrease near the open circuit voltage (higher under 〈n〉-side illumination) and levels off for higher voltages. Additionally, the numerical modeling of the VIS/NIR detector, based on the band discontinuities near the grain boundaries and interfaces, complements the study and gives insight into the internal physical process.

Original languageEnglish
Pages (from-to)175-180
Number of pages6
JournalSensors and Actuators, A: Physical
Volume85
Issue number1
DOIs
Publication statusPublished - 25 Aug 2000
EventProceedings of Eurocensorsn XIII - The Hague, Neth
Duration: 12 Sep 199915 Sep 1999

Keywords

  • Computer simulation
  • Photocurrents
  • Irradiation
  • Grain boundaries
  • Microcrystalline detectors
  • Spectral response
  • Photodetectors

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