TY - JOUR
T1 - 2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes
AU - Casa Branca, Nuno
AU - Deuermeier, Jonas
AU - Martins, Jorge
AU - Carlos, Emanuel
AU - Pereira, Maria
AU - Martins, Rodrigo
AU - Fortunato, Elvira
AU - Kiazadeh, Asal
N1 - info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UID%2FCTM%2F50025%2F2013/PT#
info:eu-repo/grantAgreement/FCT/3599-PPCDT/PTDC%2FNAN-MAT%2F30812%2F2017/PT#
info:eu-repo/grantAgreement/FCT/OE/SFRH%2FBPD%2F99136%2F2013/PT#
info:eu-repo/grantAgreement/FCT/OE/SFRH%2FBD%2F122286%2F2016/PT#
info:eu-repo/grantAgreement/FCT/OE/SFRH%2FBD%2F116047%2F2016/PT#
info:eu-repo/grantAgreement/EC/H2020/700395/EU#
This research was funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT-Portuguese Foundation for Science and Technology under project number POCI-01-0145-FEDER-007688
PY - 2020/2/1
Y1 - 2020/2/1
N2 - A room-temperature-processed resistive switching Schottky diode that can be operated in two distinct modes, depending solely on the choice of device initialization mode, is presented. Electroforming in the diode's reverse polarity leads to an abrupt filamentary switching with inherently long data retention at the expense of rectification. After this electroforming process, the devices may work in either a bipolar or unipolar manner with a resistance window of at least two orders of magnitude. Device initialization in the forward direction shows a smooth area-dependent switching over two orders of magnitude, which conserves the current rectification and allows for analog control over the resistance states (dependence of device history and applied voltage stimuli). This secondary mechanism involves ion exchange or charge trapping at the Schottky interface without a contribution from the bulk (hence, it is termed 2D), which is reported for the first time for an amorphous oxide semiconductor switching matrix.
AB - A room-temperature-processed resistive switching Schottky diode that can be operated in two distinct modes, depending solely on the choice of device initialization mode, is presented. Electroforming in the diode's reverse polarity leads to an abrupt filamentary switching with inherently long data retention at the expense of rectification. After this electroforming process, the devices may work in either a bipolar or unipolar manner with a resistance window of at least two orders of magnitude. Device initialization in the forward direction shows a smooth area-dependent switching over two orders of magnitude, which conserves the current rectification and allows for analog control over the resistance states (dependence of device history and applied voltage stimuli). This secondary mechanism involves ion exchange or charge trapping at the Schottky interface without a contribution from the bulk (hence, it is termed 2D), which is reported for the first time for an amorphous oxide semiconductor switching matrix.
KW - amorphous oxide semiconductors
KW - low-temperature electronics
KW - memristors
KW - resistive switching
KW - zinc–tin oxide
UR - http://www.scopus.com/inward/record.url?scp=85076778454&partnerID=8YFLogxK
U2 - 10.1002/aelm.201900958
DO - 10.1002/aelm.201900958
M3 - Article
AN - SCOPUS:85076778454
SN - 2199-160X
VL - 6
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 2
M1 - 1900958
ER -