不揮発性メモリ機能を有する電界効果型半導体の電子又は光電子能動デバイス及びその製造方法

Rodrigo Martins; Elvira Maria Correia Fortunato; Luis Miguel Nunes Pereira; Pedro Miguel Cândido Barquinha; Nuno Filipe de Oliveira  Correia

不揮発性メモリ機能を有する電界効果型半導体の電子又は光電子能動デバイス及びその製造方法

Rodrigo Martins (Inventor), Elvira Maria Correia Fortunato (Inventor), Luis Miguel Nunes Pereira (Inventor), Pedro Miguel Cândido Barquinha (Inventor), Nuno Filipe de Oliveira Correia (Inventor)

Research output: Patent › Regional/Other National Application

Original language	Japanese
Patent number	JP2011517504
IPC	H01L 51/ 30 A I
Priority date	20/03/08
Filing date	20/03/09
Publication status	Published - 9 Jun 2011

Cite this

@misc{74842c483cab4adeb347f8e869fc8960,

title = "不揮発性メモリ機能を有する電界効果型半導体の電子又は光電子能動デバイス及びその製造方法",

author = "Rodrigo Martins and Fortunato, {Elvira Maria Correia} and Pereira, {Luis Miguel Nunes} and Barquinha, {Pedro Miguel C{\^a}ndido} and Correia, {Nuno Filipe de Oliveira}",

year = "2011",

month = jun,

day = "9",

language = "Japanese",

type = "Patent",

note = "JP2011517504; H01L 51/ 30 A I",

}

TY - PAT

T1 - 不揮発性メモリ機能を有する電界効果型半導体の電子又は光電子能動デバイス及びその製造方法

AU - Martins, Rodrigo

AU - Fortunato, Elvira Maria Correia

AU - Pereira, Luis Miguel Nunes

AU - Barquinha, Pedro Miguel Cândido

AU - Correia, Nuno Filipe de Oliveira

PY - 2011/6/9

Y1 - 2011/6/9

M3 - Regional/Other National Application

M1 - JP2011517504

Y2 - 2009/03/20

ER -