Fingerprint
Dive into the research topics where Rafael André Henriques Ferreira is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
- 1 Similar Profiles
Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
-
300 mV-VDD, nw-Power, ST-DIGOTA Using I/O Devices in FinFET Technology
Matos, A., Machado, R., Toledo, P., Coelho, M., Ferreira, R., Martins, R., Subrahmanyam, B., Oliveira, J. P., Oliveira, L. B. & Augusto, J. S., 2025, 2025 IEEE Nordic Circuits and Systems Conference (NorCAS). Nurmi, J., Pikulins, D., Ellervee, P. & Liobe, J. (eds.). New York: Institute of Electrical and Electronics Engineers (IEEE), p. 1-6 6 p. (2025 IEEE Nordic Circuits and Systems Conference, NORCAS 2025 - Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
-
A 0.9 V StrongARM Latch Comparator with 16 ps Delay and 7.5 fJ/op in 16 nm FinFET CMOS Technology
Ferreira, R., Subrahmanyam, B., Rao, B. C. P., Coelho, M., Martins, R., Matos, A., Toledo, P., Oliveira, L. B., Augusto, J. S. & Oliveira, J. P., 2025, 2025 IEEE Nordic Circuits and Systems Conference (NorCAS). Nurmi, J., Pikulins, D., Ellervee, P. & Liobe, J. (eds.). Institute of Electrical and Electronics Engineers (IEEE), p. 1-7 7 p. (2025 IEEE Nordic Circuits and Systems Conference, NORCAS 2025 - Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
-
Analysis of the ZTC Bias Points in the FinFET Gate Capacitance and Transition Frequency
Coelho, M., Toledo, P., Matos, A., Martins, R., Ferreira, R., Subrahmanyam, B., Oliveira, L. B., Augusto, J. S. & Oliveira, J. P., 2025, 2025 37th International Conference on Microelectronics (ICM). New York: Institute of Electrical and Electronics Engineers (IEEE), 6 p.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
-
A Robustness Analysis of Hot Spots Bias Points on the FinFET: A Simulation-Based Approach
Martins, R., Coelho, M., Toledo, P., Matos, A., Ferreira, R., Subrahmanyam, B., Oliveira, L. B., Augusto, J. S. & Oliveira, J. P., 2025, Proceedings - 2025 9th International Young Engineers Forum on Electrical and Computer Engineering, YEF-ECE 2025. Institute of Electrical and Electronics Engineers (IEEE), p. 175-179 5 p. (Proceedings - 2025 9th International Young Engineers Forum on Electrical and Computer Engineering, YEF-ECE 2025).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
1 Link opens in a new tab Citation (Scopus) -
Is There a ZTC Biasing Point in the Leading-Edge FET Intrinsic Gain gmrDS?
Coelho, M., Martins, R., Toledo, P., Matos, A., Ferreira, R., Subrahmanyam, B., Oliveira, L. B., Augusto, J. S. & Oliveira, J. P., 2025, Proceedings - 2025 9th International Young Engineers Forum on Electrical and Computer Engineering, YEF-ECE 2025. Institute of Electrical and Electronics Engineers (IEEE), p. 151-156 6 p. (Proceedings - 2025 9th International Young Engineers Forum on Electrical and Computer Engineering, YEF-ECE 2025).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
2 Link opens in a new tab Citations (Scopus)