Research output

Research output per year 2004 2008 2009 2011 2016 2018 2019 2021 2024

• 149 Article
• 50 Conference contribution
• 17 Regional/Other National Application
• 8 International PCT application
• 30 More
  • 7 Chapter
  • 5 Review article
  • 4 Book
  • 3 Comment/debate
  • 3 Conference article
  • 3 National Final Application
  • 2 Paper
  • 1 Abstract
  • 1 Poster
  • 1 Editorial

Research output per year

Research output per year

Search results

• 2010

  Self-Rechargeable Paper Thin-Film Batteries: Performance and Applications

  Fortunato, E. M. C., Ferreira, I. M. M., Barquinha, P. M. C. & Martins, R. F. D. P., 1 Jan 2010, In: Journal Of Display Technology. 6, 8, p. 332-335

  Research output: Contribution to journal › Article › peer-review

  Open Access
  51 Citations (Scopus)

• Thin-film transistors based on p-type Cu2O thin films produced at room temperature

  Fortunato, E. M. C., Figueiredo, V., Barquinha, P. M. C., Elamurugu, E., Barros, R., Gonçalves, G., Park, S. H. K., Martins, R. F. D. P. & Hwang, C., 2010, In: Applied Physics Letters. 96, 19, 192102.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  File

  • transistors 100%
  • room temperature 69%
  • thin films 64%
  • copper oxides 48%
  • magnetron sputtering 35%
  175 Citations (Scopus)

  304 Downloads (Pure)

• Transparent p-type SnO(x) thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

  Fortunato, E. M. C., Barquinha, P. M. C. & Martins, R. F. D. P., 1 Jan 2010, In: Applied Physics Letters. 97, 5, p. nr. 052105

  Research output: Contribution to journal › Article › peer-review

  Open Access
  278 Citations (Scopus)

• Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric

  Fortunato, E. M. C., Barquinha, P. M. C. & Martins, R. F. D. P., 1 Jan 2010, In: Applied Physics Letters. 97, 18, p. nr. 183504

  Research output: Contribution to journal › Article › peer-review

  Open Access
  77 Citations (Scopus)
• 2009

  Gate-bias stress in amorphous oxide semiconductors thin-film transistors

  Fortunato, E. M. C., Ferreira, I. M. M., Barquinha, P. M. C. & Martins, R. F. D. P., 1 Jan 2009, In: Applied Physics Letters. 95, 6, p. nr. 063502

  Research output: Contribution to journal › Article › peer-review

  Open Access
  233 Citations (Scopus)

• High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs

  Barquinha, P. M. C., Martins, R. F. D. P., Pereira, L. M. N. & Fortunato, E. M. C., 1 Jan 2009, In: Electrochem. Solid State Lett.. 13, NA, p. 1120-1122

  Research output: Contribution to journal › Article › peer-review

  57 Citations (Scopus)

• Oxide semiconductors: Order within the disorder

  Fortunato, E. M. C., Ferreira, I. M. M., Barquinha, P. M. C., Martins, R. F. D. P. & Pereira, L. M. N., 1 Jan 2009, In: Philosophical Magazine. 89, SI28-30, p. 2741-2758

  Research output: Contribution to journal › Article › peer-review

  Open Access
  28 Citations (Scopus)

• Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics

  Barquinha, P. M. C., Martins, R. F. D. P., Pereira, L. M. N. & Fortunato, E. M. C., 1 Jan 2009, In: Journal Of The Electrochemical Society. 156, 11, p. H824-H831

  Research output: Contribution to journal › Article › peer-review

  Open Access
  68 Citations (Scopus)

• Polymer light-emitting diodes with amorphous indium-zinc oxide anodes deposited at room temperature

  Fortunato, E. M. C., Barquinha, P. M. C., Martins, R. F. D. P. & Pereira, L. M. N., 1 Jan 2009, In: Synthetic Metals. 159, 11, p. 1112-1115

  Research output: Contribution to journal › Article › peer-review

  Open Access
  17 Citations (Scopus)

• Room-Temperature Cosputtered HfO2-Al2O3 Multicomponent Gate Dielectrics

  Fortunato, E. M. C., Barquinha, P. M. C., Martins, R. F. D. P. & Pereira, L. M. N., 1 Jan 2009, In: Electrochemical And Solid State Letters. 12, 10, p. G65-G68

  Research output: Contribution to journal › Article › peer-review

  Open Access
  22 Citations (Scopus)

• Selective floating gate non-volatile paper memory transistor

  Barquinha, P. M. C., Martins, R. F. D. P., Pereira, L. M. N., Fortunato, E. M. C. & Ferreira, I. M. M., 1 Jan 2009, In: Physica Status Solidi-Rapid Research Letters. 3, NA, p. 308-310

  Research output: Contribution to journal › Article › peer-review

  Open Access
  47 Citations (Scopus)

• Self-sustained n-type memory transistor devices based on natural cellulose paper fibers

  Martins, R., Pereira, L., Barquinha, P., Correia, N., Gonçalves, G., Ferreira, I., Dias, C., Correia, N., Dionísio, M., Silva, M. & Fortunato, E., 2009, In: Journal of Information Display. 10, 4, p. 149-157 9 p.

  Research output: Contribution to journal › Article › peer-review

  • Indium 100%
  • Cellulose 84%
  • Transistors 65%
  • Electrodes 58%
  • Gate dielectrics 54%
  9 Citations (Scopus)

• Sputtered multicomponent amorphous dielectrics for transparent electronics

  Fortunato, E. M. C., Barquinha, P. M. C., Martins, R. F. D. P. & Pereira, L. M. N., 1 Jan 2009, In: Physica Status Solidi A-Applications And Materials Science. 206, 9, p. 2149-2154

  Research output: Contribution to journal › Article › peer-review

  Open Access
  15 Citations (Scopus)

• Toward High-Performance Amorphous GIZO TFTs

  Fortunato, E. M. C., Barquinha, P. M. C., Martins, R. F. D. P. & Pereira, L. M. N., 1 Jan 2009, In: Journal Of The Electrochemical Society. 156, 3, p. H161-H168

  Research output: Contribution to journal › Article › peer-review

  Open Access
  247 Citations (Scopus)

• Zinc oxide, a multifunctional material: from material to device applications

  Fortunato, E. M. C., Gonçalves, A., Pimentel, A. C. M. B. G., Barquinha, P. M. C., Gonçalves, G., Pereira, L. M. N., Ferreira, I. M. M. & Martins, R. F. D. P., Jul 2009, In: Applied Physics A: Materials Science & Processing. 96, SI1, p. 197-205

  Research output: Contribution to journal › Article › peer-review

  Open Access
  161 Citations (Scopus)
• 2008

  Crystallization of amorphous indium zinc oxide thin films produced by radio-frequency magnetron sputtering

  Gonçalves, G., Barquinha, P. M. C., Raniero, L., Martins, R. F. D. P. & Fortunato, E. M. C., 15 Feb 2008, In: Thin Solid Films. 516, 7, p. 1374-1376 3 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Magnetron sputtering 100%
  • Zinc oxide 99%
  • Indium 97%
  • Oxide films 92%
  • Magnetron Sputtering 86%
  45 Citations (Scopus)

• Effect of annealing on the properties of N-doped ZnO films deposited by RF magnetron sputtering

  Wang, J., Elamurugu, E., Sallet, V., Jomard, F., Lusson, A., Botelho Do Rego, A. M., Barquinha, P. M. C., Gonçalves, G., Martins, R. F. D. P. & Fortunato, E. M. C., 15 Sept 2008, In: Applied Surface Science. 254, 22, p. 7178-7182 5 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access
  28 Citations (Scopus)

• Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copper

  Figueiredo, V., Elamurugu, E., Gonçalves, G., Barquinha, P. M. C., Pereira, L. M. N., Franco, N., Alves, E., Martins, R. F. D. P. & Fortunato, E., 30 Apr 2008, In: Applied Surface Science. 254, 13, p. 3949-3954 6 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Copper oxides 100%
  • Oxide films 85%
  • copper oxides 80%
  • Copper Oxide 76%
  • Annealing 68%
  251 Citations (Scopus)

• Electron transport in single and multicomponent n-type oxide semiconductors

  Martins, R. F. D. P., Barquinha, P. M. C., Pimentel, A. C. M. B. G., Pereira, L. M. N., Fortunato, E., Kang, D., Song, I., Kim, C., Park, J. & Park, Y., 15 Feb 2008, In: Thin Solid Films. 516, 7, p. 1322-1325 4 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Electron Transport 100%
  • Oxide semiconductors 74%
  • Multicomponent Reaction 54%
  • Oxides 53%
  • Semiconductor 47%
  25 Citations (Scopus)

• Gallium-indium-zinc-oxide-based thin-film transistors: Influence of the source/drain material

  Barquinha, P. M. C., Vilà, A., Gonçalves, G., Pereira, L., Martins, R. F. D. P., Morante, J. & Fortunato, E., Apr 2008, In: Ieee Transactions On Electron Devices. 55, 4, p. 954-960 7 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Gallium 100%
  • Zinc oxide 93%
  • Indium 91%
  • Thin film transistors 89%
  • Electric properties 44%
  193 Citations (Scopus)

• Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications

  Fortunato, E. M. C., Raniero, L., Silva, L., Gonçalves, A., Pimentel, A. C. M. B. G., Barquinha, P. M. C., Aguas, H., Pereira, L. M. N., Gonçalves, G., Ferreira, I., Elangovan, E. & Martins, R. F. D. P., Dec 2008, In: Solar Energy Materials and Solar Cells. 92, 12, p. 1605-1610 6 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Gallium 100%
  • Zinc oxide 93%
  • Oxide films 87%
  • Zinc Oxide 68%
  • Thin films 66%
  167 Citations (Scopus)

• High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors

  Fortunato, E. M. C., Barquinha, P. M. C., Gonçalves, G., Pereira, L. M. N. & Martins, R. F. D. P., Mar 2008, In: Solid-State Electronics. 52, 3, p. 443-448 6 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Zinc oxide 100%
  • Indium 97%
  • Thin film transistors 96%
  • Oxide semiconductors 89%
  • Threshold voltage 82%
  85 Citations (Scopus)

• High mobility indium free amorphous oxide thin film transistors

  Fortunato, E. M. C., Pereira, L. M. N., Barquinha, P. M. C., Botelho Do Rego, A. M., Goņalves, G., Vil̀, A., Morante, J. R. & Martins, R. F. P., 13 Jun 2008, In: Applied Physics Letters. 92, 22, 222103.

  Research output: Contribution to journal › Article › peer-review

  • indium 100%
  • transistors 83%
  • oxides 65%
  • thin films 53%
  • zinc oxides 50%
  219 Citations (Scopus)

• High-performance flexible hybrid field-effect transistors based on cellulose fiber paper

  Fortunato, E. M. C., Correia, N., Barquinha, P. M. C., Pereira, L. M. N., Gonçalves, G. & Martins, R. F. D. P., 1 Jan 2008, In: IEEE Electron Device Letters. 29, 9, p. 988-990 3 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access
  266 Citations (Scopus)

• Low temperature high k dielectric on poly-Si TFTs

  Pereira, L. M. N., Barquinha, P. M. C., Fortunato, E. M. C. & Martins, R. F. D. P., 1 May 2008, In: Journal of Non-Crystalline Solids. 354, 19-25, p. 2534-2537 4 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • High-k dielectric 100%
  • Thin film transistors 81%
  • Polysilicon 73%
  • Field Effect 63%
  • Annealing 63%
  11 Citations (Scopus)

• The effect of deposition conditions and annealing on the performance of high-mobility GIZO TFTs

  Barquinha, P. M. C., Pereira, L. M. N., Gonçalves, G., Martins, R. F. D. P. & Fortunato, E., 23 Jun 2008, In: Electrochemical And Solid State Letters. 11, 9, p. H248-H251

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Gallium 100%
  • Zinc oxide 93%
  • Indium 91%
  • Thin film transistors 89%
  • Oxide films 87%
  118 Citations (Scopus)

• The role of source and drain material in the performance of GIZO based thin-film transistors

  Barquinha, P. M. C., Vilà, A., Gonçalves, G., Pereira, L. M. N., Martins, R. F. D. P., Morante, J. & Fortunato, E. M. C., 1 Jan 2008, In: Physica Status Solidi A-Applications And Materials Science. 205, 8, p. 1905-1909 5 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access
  35 Citations (Scopus)

• Write-erase and read paper memory transistor

  Martins, R. F. D. P., Barquinha, P. M. C., Pereira, L. M. N., Correia, N., Gonçalves, G., Ferreira, I. M. M. & Fortunato, E. M. C., 1 Jan 2008, In: Applied Physics Letters. 93, 20, 203501.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • transistors 100%
  • electrodes 77%
  • cellulose 70%
  • field effect transistors 49%
  • hysteresis 48%
  133 Citations (Scopus)
• 2007

  3 dimensional polymorphous silicon based metal-insulator-semiconductor position sensitive detectors

  Fortunato, E. M. C., Barquinha, P. M. C., Martins, R. F. D. P., Pereira, L. M. N. & Águas, H. M. B., 1 Jan 2007, In: Thin Solid Films. 515, 19, p. 7530-7533

  Research output: Contribution to journal › Article › peer-review

  Open Access
  3 Citations (Scopus)

• Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs

  Fortunato, E. M. C., Barquinha, P. M. C., Pimentel, A. C. M. B. G., Pereira, L. M. N., Gonçalves, G. & Martins, R. F. D. P., Jan 2007, In: Physica Status Solidi-Rapid Research Letters. 1, 1, p. R34-R36 3 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Amorphous silicon 100%
  • Sputtering 93%
  • Thin film transistors 93%
  • Threshold voltage 80%
  • Semiconductor materials 64%
  194 Citations (Scopus)

• Effect of annealing temperature on the properties of IZO films and IZO based transparent TFTs

  Fortunato, E. M. C., Barquinha, P. M. C., Martins, R. F. D. P. & Pereira, L. M. N., 1 Jan 2007, In: Thin Solid Films. 515, 24, p. 8450-8454

  Research output: Contribution to journal › Article › peer-review

  Open Access
  115 Citations (Scopus)

• Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films

  Barquinha, P. M. C., Martins, R. F. D. P., Pereira, L. M. N. & Fortunato, E. M. C., 1 Jan 2007, In: Thin Solid Films. 515, 24, p. 8562-8566

  Research output: Contribution to journal › Article › peer-review

  Open Access
  147 Citations (Scopus)

• Role of order and disorder in covalent semiconductors and ionic oxides used to produce thin film transistors

  Fortunato, E. M. C., Ferreira, I. M. M., Barquinha, P. M. C., Martins, R. F. D. P. & Pereira, L. M. N., 1 Jan 2007, In: Applied Physics A: Materials Science & Processing. 89, 1, p. 37-42

  Research output: Contribution to journal › Article › peer-review

  Open Access
  45 Citations (Scopus)

• Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors

  Fortunato, E. M. C., Ferreira, I. M. M., Barquinha, P. M. C., Martins, R. F. D. P. & Pereira, L. M. N., 1 Jan 2007, In: Journal of Applied Physics. 101, 4, p. 044505

  Research output: Contribution to journal › Article › peer-review

  206 Citations (Scopus)
• 2006

  Effect of UV and visible light radiation on the electrical performances of transparent TFTs based on amorphous indium zinc oxide

  Barquinha, P. M. C., Pimentel, A. C. M. B. G., Marques, A., Pereira, L. M. N., Martins, R. F. D. P. & Fortunato, E. M. C., 15 Jun 2006, In: Journal of Non-Crystalline Solids. 352, 9-20 SPEC. ISS., p. 1756-1760 5 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Zinc oxide 100%
  • Ultraviolet radiation 98%
  • Indium 97%
  • indium oxides 74%
  • Zinc Oxide 73%
  109 Citations (Scopus)

• Electron transport and optical characteristics in amorphous indium zinc oxide films

  Martins, R. F. D. P., Almeida, P., Barquinha, P. M. C., Pereira, L. M. N., Pimentel, A. C. M. B. G., Ferreira, I. & Fortunato, E. M. C., 15 Jun 2006, In: Journal of Non-Crystalline Solids. 352, 9-20 SPEC. ISS., p. 1471-1474 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Electron Transport 100%
  • Zinc oxide 82%
  • Indium 81%
  • Oxide films 77%
  • Partial pressure 74%
  89 Citations (Scopus)

• Impedance study of the electrical properties of poly-Si thin film transistors

  Pereira, L. M. N., Raniero, L., Barquinha, P. M. C., Fortunato, E. M. C. & Martins, R. F. D. P., 15 Jun 2006, In: Journal of Non-Crystalline Solids. 352, 9-20, p. 1737-1740 4 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access
  4 Citations (Scopus)

• Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide

  Barquinha, P. M. C., Pimentel, A. C. M. B. G., Marques, A., Pereira, L. M. N., Martins, R. F. D. P. & Fortunato, E. M. C., 15 Jun 2006, In: Journal of Non-Crystalline Solids. 352, 9-20 SPEC. ISS., p. 1749-1752 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Zinc oxide 100%
  • Indium 97%
  • Electric properties 80%
  • Transmittance 75%
  • indium oxides 74%
  214 Citations (Scopus)

• Influence of time, light and temperature on the electrical properties of zinc oxide TFTs

  Barquinha, P. M. C., Fortunato, E. M. C., Gonçalves, A., Pimentel, A. C. M. B. G., Marques, A., Pereira, L. M. N. & Martins, R. F. D. P., Jan 2006, In: Superlattices And Microstructures. 39, 1-4, p. 319-327 9 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Zinc oxide 100%
  • Thin film transistors 96%
  • Oxide films 93%
  • Electric properties 80%
  • Zinc Oxide 73%
  30 Citations (Scopus)

• Low temperature processed hafnium oxide: Structural and electrical properties

  Pereira, L. M. N., Barquinha, P. M. C., Fortunato, E. M. C. & Martins, R. F. D. P., Dec 2006, In: Materials Science in Semiconductor Processing. 9, 6, p. 1125-1132 8 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access
  29 Citations (Scopus)

• Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices

  Fortunato, E. M. C., Gonçalves, A., Marques, A., Pimentel, A. C. M. B. G., Barquinha, P. M. C., Aguas, H., Pereira, L. M. N., Raniero, L., Gonçalves, G., Ferreira, I. & Martins, R. F. D. P., 2006, In: Materials Science Forum. 514-516, p. 3-7 5 p.

  Research output: Contribution to journal › Article › peer-review

  • zinc oxides 100%
  • solar position 62%
  • electronics 53%
  • thin films 53%
  • p-type semiconductors 44%
  9 Citations (Scopus)
• 2005

  A Study on the Electrical Properties of ZnO Based Transparent TFTs

  Barquinha, P. M. C., Fortunato, E. M. C., Gonçalves, A., Pimentel, A. C. M. B. G., Marques, A., Pereira, L. M. N. & Martins, R. F. D. P., 2005, In: Materials Science Forum. 514-516, PART 1, p. 68-72 5 p.

  Research output: Contribution to journal › Article › peer-review

  • electrical properties 100%
  • zinc oxides 87%
  • silicon 48%
  • threshold voltage 43%
  • leakage 37%
  5 Citations (Scopus)

• Fully transparent ZnO thin-film transistor produced at room temperature

  Fortunato, E. M. C., Barquinha, P. M. C., Pimentel, A. C. M. B. G., Gonçalves, A. M. F., Marques, A. J. S., Pereira, L. M. N. & Martins, R. F. P., 8 Mar 2005, In: Advanced Materials. 17, 5, p. 590-594 5 p.

  Research output: Contribution to journal › Article › peer-review

  • Thin film transistors 100%
  • Oxygen vacancies 60%
  • Nanocrystals 58%
  • Magnetron sputtering 52%
  • Current voltage characteristics 51%
  892 Citations (Scopus)

• Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors

  Pereira, L. M. N., Barquinha, P. M. C., Fortunato, E. M. C. & Martins, R. F. D. P., 1 Sept 2005, In: Thin Solid Films. 487, 1-2, p. 102-106 5 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access
  16 Citations (Scopus)

• Influence of the oxygen/argon ratio on the properties of sputtered hafnium oxide

  Pereira, L. M. N., Barquinha, P. M. C., Fortunato, E. M. C. & Martins, R. F. D. P., 25 Apr 2005, In: Materials Science And Engineering B-Advanced Functional Solid-State Materials. 118, 1-3, p. 210-213 4 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access
  63 Citations (Scopus)

• Recent advances in ZnO transparent thin film transistors

  Fortunato, E. M. C., Barquinha, P. M. C., Pimentel, A. C. M. B. G., Gonçalves, A., Marques, A., Pereira, L. M. N. & Martins, R. F. D. P., 1 Sept 2005, In: Thin Solid Films. 487, 1-2, p. 205-211 7 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Thin film transistors 100%
  • transistors 62%
  • Ultraviolet detectors 48%
  • Wide band gap semiconductors 44%
  • thin films 40%
  368 Citations (Scopus)

• Transport in high mobility amorphous wide band gap indium zinc oxide films

  Martins, R. F. D. P., Barquinha, P. M. C., Pimentel, A. C. M. B. G., Pereira, L. M. N. & Fortunato, E. M. C., Jul 2005, In: Physica Status Solidi A-Applications And Materials Science. 202, 9, p. R95-R97 3 p.

  Research output: Contribution to journal › Article › peer-review

  • Zinc oxide 100%
  • Indium 97%
  • Oxide films 93%
  • Energy gap 85%
  • Hall mobility 75%
  126 Citations (Scopus)
• 2004

  Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering

  Barquinha, P. M. C., Pereira, L. M. N., Águas, H. M. B., Fortunato, E. M. C. & Martins, R. F. D. P., 1 Jan 2004, In: Materials Science in Semiconductor Processing. 7, 4-6, p. 243-247 5 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access
  14 Citations (Scopus)

• Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

  Fortunato, E. M. C., Barquinha, P. M. C., Pimentel, A. C. M. B. G., Gonçalves, A., Marques, A. J. S., Martins, R. F. D. P. & Pereira, L. M. N., 27 Sept 2004, In: Applied Physics Letters. 85, 13, p. 2541-2543 3 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access
  584 Citations (Scopus)