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Leopoldo José Martinho Guimarães

  • DCM - Departamento de Ciência dos Materiais Faculdade de Ciências e Tecnologia/UNL Edifício II Campus de Caparica 2829-516 Caparica

    Portugal

  • 14 Citations
  • 2 h-Index
19831996
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Microcrystalline silicon Engineering & Materials Science
Glow discharges Engineering & Materials Science
Transport properties Engineering & Materials Science
Amorphous silicon Engineering & Materials Science
Optoelectronic devices Engineering & Materials Science
Optical properties Engineering & Materials Science
silicon films Physics & Astronomy
Photoconductivity Engineering & Materials Science

Research Output at NOVA 1983 1996

  • 14 Citations
  • 2 h-Index
  • 3 Article
  • 1 Chapter
  • 1 Conference article
4 Citations (Scopus)

Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques

Martins, R., Vieira, M., Ferreira, I., Fortunato, E. & Guimarães, L., 1 Jan 1996, In : Solar Energy Materials and Solar Cells. 41-42, p. 493-517 25 p.

Research output: Contribution to journal › Article

Microcrystalline silicon
Optoelectronic devices
Transport properties
Conductive films
Partial pressure

Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques

Martins, R., Vieira, M., Ferreira, I., Fortunato, E. & Guimarães, L., 1994, In : Proceedings Of The Ieee. 1, p. 508-511 4 p.

Research output: Contribution to journal › Conference article

Microcrystalline silicon
Transport properties
transport properties
silicon
silicon films
10 Citations (Scopus)

Engineering of plasma deposition systems used for producing large area a-Si:H devices

Martins, R., Ferreira, I., Carvalho, N. M. & Guimarães, L., 1991, In : Journal of Non-Crystalline Solids. 137-138, PART 2, p. 757-760 4 p.

Research output: Contribution to journal › Article

Plasma deposition
Amorphous silicon
Geometry

ROLE OF SIO AT TCO/P INTERFACE ON THE ELECTRICAL-PROPERTIES OF THE P/I JUNCTION

Carvalho, C., de Nijs, J. M. M., Martins, R. & Guimarães, L., 1991, AMORPHOUS SILICON TECHNOLOGY - 1991. Madan, A., Hamakawa, Y., Thompson, M. J., Taylor, P. C. & Lecomber, P. G. (eds.). Materials Research Society, p. 487-492 (MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS; vol. 219).

Research output: Chapter in Book/Report/Conference proceeding › Chapter

The interpretation of the electric and optical properties of a-Si: H films produced by rf glow discharge through dark conductivity, photoconductivity and pulse controlled capacitance-voltage measurements

Martins, R., Dias, A. G. & Guimarães, L., 1983, In : Journal of Non-Crystalline Solids. 57, 1, p. 9-22 14 p.

Research output: Contribution to journal › Article

Capacitance measurement
Voltage measurement
Photoconductivity
Glow discharges
Electric properties