Research output

Research output per year 1999 2001 2002 2003 2004 2024

• 180 Article
• 19 Conference contribution
• 7 Chapter
• 6 Conference article
• 7 More
  • 5 Review article
  • 1 Poster
  • 1 Meeting Abstract

Research output per year

Research output per year

Search results

• 2010

  Nanostructured silicon based thin film transistors processed in the plasma dark region

  Pereira, L. M. N., Aguas, H., Gomes, L., Barquinha, P. M. C., Fortunato, E. M. C. & Martins, R. F. D. P., Apr 2010, In: Journal of Nanoscience and Nanotechnology. 10, 4, p. 2938-2943

  Research output: Contribution to journal › Article › peer-review

  • Thin film transistors 100%
  • Plasmas 72%
  • transistors 62%
  • Silicon 61%
  • Plasma 48%
  1 Citation (Scopus)

• Role of Trimethylboron to Silane Ratio on the Properties of p-Type Nanocrystalline Silicon Thin Film Deposited by Radio Frequency Plasma Enhanced Chemical Vapour Deposition

  Fortunato, E. M. C., Águas, H. M. B., Filonovich, S. & Martins, R. F. D. P., 1 Jan 2010, In: Journal of Nanoscience and Nanotechnology. 10, 4, p. 2547-2551

  Research output: Contribution to journal › Article › peer-review

  Open Access
  4 Citations (Scopus)
• 2009

  Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure

  Filonovich, S. A., Águas, H., Bernacka-Wojcik, I., Gaspar, C., Vilarigues, M., Silva, L. B., Fortunato, E. & Martins, R., 16 Jun 2009, In: Vacuum. 83, 10, p. 1253-1256 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Nanocrystalline silicon 100%
  • Plasma enhanced chemical vapor deposition 76%
  • Silanes 68%
  • silanes 58%
  • silicon films 57%
  31 Citations (Scopus)

• Nanostructured silicon and its application to solar cells, position sensors and thin film transistors

  Fortunato, E. M. C., Ferreira, I. M. M., Águas, H. M. B., Martins, R. F. D. P. & Pereira, L. M. N., 1 Jan 2009, In: Philosophical Magazine. 89, SI28-30, p. 2699-2721

  Research output: Contribution to journal › Article › peer-review

  Open Access
  50 Citations (Scopus)

• POLYMERIC FILM SENSORS BASED ON PAH-PAZO IONIC SELF-ASSEMBLED MULTI-NANOLAYERS

  Águas, H. M. B., 1 Jan 2009, BIODEVICES 2009: PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON BIOMEDICAL ELECTRONICS AND DEVICES. Filho, TFB. & Gamboa, H. (eds.). AVENIDA D MANUEL L, 27A 2 ESQUERDO, SETUBAL, 2910-595, PORTUGAL: INSTICC-INST SYST TECHNOLOGIES INFORMATION CONTROL & COMMUNICATION, p. 458-461

  Research output: Chapter in Book/Report/Conference proceeding › Chapter

  2 Citations (Scopus)
• 2008

  Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications

  Fortunato, E. M. C., Raniero, L., Silva, L., Gonçalves, A., Pimentel, A. C. M. B. G., Barquinha, P. M. C., Aguas, H., Pereira, L. M. N., Gonçalves, G., Ferreira, I., Elangovan, E. & Martins, R. F. D. P., Dec 2008, In: Solar Energy Materials and Solar Cells. 92, 12, p. 1605-1610 6 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Gallium 100%
  • Zinc oxide 93%
  • Oxide films 87%
  • Zinc Oxide 68%
  • Thin films 66%
  167 Citations (Scopus)

• Metal contamination detection in nickel induced crystallized silicon by spectroscopic ellipsometry

  Pereira, L. M. N., Aguas, H., Beckers, M., Martins, R. M. S., Fortunato, E. & Martins, R. F. D. P., 1 May 2008, JOURNAL OF NON-CRYSTALLINE SOLIDS. Vol. 354. p. 2319-2323 5 p.

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  Open Access

  • ellipsometry 100%
  • contamination 91%
  • nickel 82%
  • backscattering 60%
  • silicon 55%
  1 Citation (Scopus)

• n-PS/a-Si : H heterojunction for device application

  Prabakaran, R., Águas, H. M. B., Fortunato, E. M. C., Martins, R. F. D. P. & Ferreira, I. M. M., 1 Jan 2008, In: Journal of Non-Crystalline Solids. 354, 19-25, p. 2632-2636 5 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access
  6 Citations (Scopus)

• Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H using PECVD Technique

  Prabakaran, R., Aguas, H., Pereira, L. M. N., Elangovan, E., Fortunato, E. M. C., Martins, R. F. D. P. & Ferreira, I. M. M., 2008, Advanced Materials Forum IV - Selected, peer reviewed papers from the 4th International Materials Symposium Materiais 2007 and 8th Encontro da Sociedade Portuguesa de Materiais - SPM. Marques, AT., Silva, AF., Baptista, APM., Sa, C., Alves, F., Malheiros, LF. & Vieira, M. (eds.). Zurich, Switzerland: Trans Tech Publications, Vol. 587-588. p. 308-312 (Materials Science Forum; vol. 587-588).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  • porous silicon 100%
  • current density 66%
  • low currents 34%
  • ellipsometry 30%
  • high current 28%

• Spectroscopic ellipsometry study of Co-doped TiO2 films

  Aguas, H., Popovici, N., Pereira, L. M. N., Conde, O., Branford, W. R., Cohen, L. F., Fortunato, E. & Martins, R. F. D. P., 4 Apr 2008, In: Physica Status Solidi A-Applications And Materials Science. 205, 4, p. 880-883

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Spectroscopic ellipsometry 100%
  • Ellipsometry 60%
  • Electrons 55%
  • ellipsometry 53%
  • Free Electron 42%
  11 Citations (Scopus)

• Study of environmental degradation of silver surface

  Aguas, H., Silva, R., Pereira, L., Fortunato, E. & Martins, R. F. D. P., 8 May 2008, Physica Status Solidi C-Current Topics in Solid State Physics. Vol. 5. p. 1215-1218 4 p.

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  Open Access

  • silver 100%
  • degradation 91%
  • sulfides 51%
  • silver chlorides 37%
  • silver oxides 35%
  12 Citations (Scopus)
• 2007

  3 dimensional polymorphous silicon based metal-insulator-semiconductor position sensitive detectors

  Fortunato, E. M. C., Barquinha, P. M. C., Martins, R. F. D. P., Pereira, L. M. N. & Águas, H. M. B., 1 Jan 2007, In: Thin Solid Films. 515, 19, p. 7530-7533

  Research output: Contribution to journal › Article › peer-review

  Open Access
  3 Citations (Scopus)

• Characterization of nickel induced crystallized silicon by spectroscopic ellipsometry

  Pereira, L., Aguas, H., Beckers, M., Martins, R. M. S., Fortunato, E. & Martins, R., 2007, Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006. Vol. 910. p. 529-534 6 p.

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  • Spectroscopic ellipsometry 100%
  • Ellipsometry 60%
  • ellipsometry 53%
  • Nickel 51%
  • nickel 44%

• Characterization of nickel induced crystallized silicon by spectroscopic ellipsornetry

  Martins, R. F. D. P., Pereira, L. M. N., Fortunato, E. M. C. & Águas, H. M. B., 1 Jan 2007, In: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006. 910, NA, p. 529-534

  Research output: Contribution to journal › Article › peer-review

• Optical and structural analysis of porous silicon coated with GZO films using rf magnetron sputtering

  Fortunato, E. M. C., Martins, R. F. D. P., Gonçalves, A., Prabakaram, R., Ferreira, I. M. M. & Águas, H. M. B., 1 Jan 2007, In: Thin Solid Films. 515, 24, p. 8664-8669

  Research output: Contribution to journal › Article › peer-review

  Open Access
  31 Citations (Scopus)

• Role of the oxide layer on the performances of a-Si: H schottky structures applied to PDS fabrication

  Aguas, H., Pereira, L., Costa, D., Raniero, L., Fortunato, E. & Martins, R., 2007, Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006. Vol. 910. p. 415-420 6 p.

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  • Semiconductor materials 100%
  • Oxides 96%
  • Fabrication 83%
  • Metals 72%
  • Oxide 61%
• 2006

  Amorphous silicon position sensitive detectors applied to micropositioning

  Contreras, J., Ferreira, I., Costa, D., Pereira, S., Aguas, H., Fortunato, E. M. C. & Martins, R. F. D. P., 15 Jun 2006, In: Journal of Non-Crystalline Solids. 352, 9-20 SPEC. ISS., p. 1792-1796 5 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Amorphous silicon 100%
  • Amorphous Silicon 99%
  • Ocular 94%
  • Photovoltage 86%
  • Microscopes 70%
  13 Citations (Scopus)

• Effect of sterilization on corrosion behavior of NiTi alloy wires

  Silva, R. J. C., Braz Fernandes, F. M., Mahesh, K. K. & Águas, H. M. B., 2006, Proceedings - EUROCORR 2005, the European Corrosion Congress ; Lisbon, Portugal, 4 - 8 September 2005. Lisbon: Portuguese Society of Materials

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

• Insights on amorphous silicon nip and MIS 3D position sensitive detectors

  Martins, R. F. D. P., Costa, D., Aguas, H., Soares, F., Marques, A., Ferreira, I., Borges, P., Pereira, S., Raniero, L. & Fortunato, E. M. C., 1 Jan 2006, Materials Science Forum. Vol. 514-516. p. 13-17 5 p.

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  Open Access

  • MIS (semiconductors) 100%
  • amorphous silicon 82%
  • detectors 49%
  • cut-off 37%
  • image resolution 26%
  2 Citations (Scopus)

• Investigation of a-Si:H 1D MIS position sensitive detectors for application in 3D sensors

  Águas, H. M. B., Pereira, L. M. N., Raniero, L., Costa, D., Fortunato, E. M. C. & Martins, R. F. D. P., 15 Jun 2006, In: Journal of Non-Crystalline Solids. 352, 9-20 SPEC. ISS., p. 1787-1791 5 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • MIS (semiconductors) 100%
  • Semiconductor materials 79%
  • Detectors 69%
  • Error 67%
  • Wavelength 63%
  5 Citations (Scopus)

• Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices

  Fortunato, E. M. C., Gonçalves, A., Marques, A., Pimentel, A. C. M. B. G., Barquinha, P. M. C., Aguas, H., Pereira, L. M. N., Raniero, L., Gonçalves, G., Ferreira, I. & Martins, R. F. D. P., 2006, In: Materials Science Forum. 514-516, p. 3-7 5 p.

  Research output: Contribution to journal › Article › peer-review

  • zinc oxides 100%
  • solar position 62%
  • electronics 53%
  • thin films 53%
  • p-type semiconductors 44%
  9 Citations (Scopus)

• Nanostructure characterization of high k materials by spectroscopic ellipsometry

  Pereira, L. M. N., Águas, H. M. B., Fortunato, E. M. C. & Martins, R. F. D. P., 31 Oct 2006, In: Applied Surface Science. 253, 1, p. 339-343 5 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Spectroscopic ellipsometry 100%
  • Nanostructures 67%
  • Ellipsometry 60%
  • ellipsometry 53%
  • Tantalum oxides 50%
  15 Citations (Scopus)

• Silicon thin films prepared in the transition region and their use in solar cells

  Zhang, S., Liao, X., Raniero, L., Fortunato, E. M. C., Águas, H. M. B., Martins, R. F. D. P. & Ferreira, I. M. M., 23 Nov 2006, In: Solar Energy Materials and Solar Cells. 90, 18-19, p. 3001-3008 8 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Solar cells 100%
  • Blue shift 90%
  • Thin films 89%
  • Photoconductivity 88%
  • Solar Cell 81%
  23 Citations (Scopus)

• Spectroscopic ellipsometry study of nickel induced crystallization of a-Si

  Pereira, L. M. N., Águas, H. M. B., Beckers, M., Martins, R. M. S., Fortunato, E. M. C. & Martins, R. F. D. P., 15 Jun 2006, In: Journal of Non-Crystalline Solids. 352, 9-20, p. 1204-1208 5 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Spectroscopic ellipsometry 100%
  • Ellipsometry 60%
  • Crystallization 59%
  • Crystalline materials 57%
  • Annealing 54%
  9 Citations (Scopus)

• Study of nanostructured silicon by hydrogen evolution and its application in p-i-n solar cells

  Raniero, L., Ferreira, I. M. M., Pereira, L. M. N., Águas, H. M. B., Fortunato, E. M. C. & Martins, R. F. D. P., 15 Jun 2006, In: Journal of Non-Crystalline Solids. 352, 9-20, p. 1945-1948 4 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Amorphous Silicon 100%
  • Short-Range Order 97%
  • Plasma Enhanced Chemical Vapour Deposition 88%
  • Microcrystallinity 79%
  • Solar cells 78%
  14 Citations (Scopus)
• 2005

  Amorphous silicon based p-i-i-n structure for color sensor

  Fortunato, E. M. C., Zhang, S., Ferreira, I. M. M., Raniero, L., Águas, H. M. B., Martins, R. F. D. P. & Pereira, L. M. N., 1 Jan 2005, MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. Vol. 862. p. 679-683

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  Open Access
  1 Citation (Scopus)

• Amorphous silicon-based PINIP structure for color sensor

  Zhang, S., Raniero, L., Fortunato, E. M. C., Ferreira, I. M. M., Águas, H. M. B. & Martins, R. F. D. P., 1 Sept 2005, In: Thin Solid Films. 487, 1-2, p. 268-270 3 p.

  Research output: Contribution to journal › Article › peer-review

  • Amorphous silicon 100%
  • amorphous silicon 67%
  • Energy gap 62%
  • Band Gap 55%
  • Color 52%
  5 Citations (Scopus)

• Characterization of silicon carbide thin films and their use in colour sensor

  Zhang, S., Raniero, L., Fortunato, E. M. C., Liao, X., Hu, Z., Ferreira, I. M. M., Águas, H. M. B., Ramos, A. R. L., Alves, E. & Martins, R. F. D. P., May 2005, In: Solar Energy Materials and Solar Cells. 87, 1-4, p. 343-348 6 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access
  5 Citations (Scopus)

• Effect of the load resistance in the linearity and sensitivity of MIS position sensitive detectors

  Aguas, H., Pereira, L., Raniero, L., Fortunato, E. M. C. & Martins, R. F. D. P., 1 Jan 2005, MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. Vol. 862. p. 691-696 6 p. A15.6

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  Open Access

  • MIS (semiconductors) 100%
  • linearity 85%
  • sensitivity 52%
  • detectors 49%
  • impedance 11%

• Flexible a-Si:H Position Sensitive Detectors: Special Issue on Flexible Electronics Technology, Part II: Materials and Devices

  Fortunato, E. M. C., Pereira, L. M. N., Aguas, H., Ferreira, I. & Martins, R. F. D. P., 18 Jul 2005, Flexible a-Si:H Position Sensitive Detectors: Flexible Electronics Technology, Part II: Materials and Devices. Nathan, A. & Chalamala, B. R. (eds.). 1st edition ed. United States, Vol. 93. p. 1281-1286 6 p.

  Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

  Open Access
  35 Citations (Scopus)

• Influence of hydrogen plasma on electrical and optical properties of transparent conductive oxides

  Raniero, L., Gonçalves, A., Pimentel, A., Ferreira, I., Zhang, S., Pereira, L., Águas, H., Fortunato, E. & Martins, R., 1 Jan 2005, In: Materials Research Society Symposium Proceedings. 862, p. 543-548 6 p., A21.10.

  Research output: Contribution to journal › Conference article › peer-review

  • Optical properties 100%
  • hydrogen plasma 91%
  • Electric properties 85%
  • Solar cells 85%
  • Plasmas 74%

• Linearity and sensitivity of MIS position sensitive detectors

  Aguas, H., Pereira, L. M. N., Costa, D., Fortunato, E. M. C. & Martins, R. F. D. P., 1 Jan 2005, In: Journal of Materials Science. 40, 6, p. 1377-1381 5 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Nonconductor 100%
  • Semiconductor materials 78%
  • Detectors 69%
  • Semiconductor 67%
  • Metals 57%
  17 Citations (Scopus)

• Metal induced crystallization: Gold versus aluminium

  Pereira, L. M. N., Águas, H. M. B., Vilarinho, P., Fortunato, E. M. C. & Martins, R. F. D. P., Mar 2005, In: Journal of Materials Science. 40, 6, p. 1387-1391 5 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Crystallization 100%
  • Gold 99%
  • Aluminum 70%
  • Metals 58%
  • Crystalline materials 48%
  11 Citations (Scopus)

• Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices

  Pimentel, A., Fortunato, E., Gonçalves, A., Marques, A. C., Águas, H., Pereira, L., Ferreira, I. & Martins, R., 1 Sept 2005, In: Thin Solid Films. 487, 1-2, p. 212-215 4 p.

  Research output: Contribution to journal › Conference article › peer-review

  • Zinc oxide 100%
  • Zinc Oxide 73%
  • zinc oxides 72%
  • Ultraviolet detectors 69%
  • Polycrystalline Solid 67%
  52 Citations (Scopus)

• Role of buffer layer on the performances of amorphous silicon solar cells with incorporated nanoparticles produced by plasma enhanced chemical vapor deposition at 27.12 MHz

  Raniero, L., Zhang, S., Águas, H. M. B., Ferreira, I. M. M., Igreja, R. A. G. B. D. N., Fortunato, E. M. C. & Martins, R. F. D. P., 1 Sept 2005, In: Thin Solid Films. 487, 1-2, p. 170-173 4 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Buffer layers 100%
  • Plasma enhanced chemical vapor deposition 99%
  • Amorphous silicon 95%
  • Silicon solar cells 95%
  • Plasma Enhanced Chemical Vapour Deposition 84%
  24 Citations (Scopus)

• Study of a-SiC : H buffer layer on nc-Si/a-Si : H solar cells deposited by PECVD technique.

  Raniero, L., Ferreira, I., Aguas, H., Fortunato, E. M. C. & Martins, R. F. D. P., 1 Jan 2005, IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE. p. 1548-1551 4 p.

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  Open Access

  • buffers 100%
  • solar cells 87%
  • capacitance 27%
  • nanoclusters 18%
  • silanes 18%
  2 Citations (Scopus)

• Super linear position sensitive detectors using MIS structures

  Aguas, H., Pereira, L. M. N., Costa, D., Fortunato, E. M. C. & Martins, R. F. D. P., Feb 2005, In: Optical Materials. 27, 5, p. 1088-1092

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Metal detectors 100%
  • Nonconductor 70%
  • MIS (semiconductors) 70%
  • Semiconductor materials 55%
  • Detectors 48%
  13 Citations (Scopus)
• 2004

  Batch processing method to deposit a-Si: H films by PECVD

  Raniero, L., Águas, H., Pereira, L., Fortunato, E., Ferreira, I. & Martins, R., 2004, In: Materials Science Forum. 455-456, p. 104-107 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Plasma enhanced chemical vapor deposition 100%
  • Optical band gaps 70%
  • Deposits 69%
  • Plasmas 64%
  • Amorphous films 57%
  1 Citation (Scopus)

• Characterization of silicon carbide thin films prepared by VHF-PECVD technology

  Zhang, S., Raniero, L., Fortunato, E. M. C., Pereira, L. M. N., Martins, N. E., Canhola, P., Ferreira, I., R. Nedev, N., Aguas, H. & Martins, R. F. D. P., 15 Jun 2004, In: Journal of Non-Crystalline Solids. 338-340, 1 SPEC. ISS., p. 530-533 4 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Plasma enhanced chemical vapor deposition 100%
  • Silicon Carbide 78%
  • Silicon carbide 75%
  • silicon carbides 68%
  • Thin films 66%
  22 Citations (Scopus)

• Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniques

  Raniero, L., Pereira, L. M. N., Ferreira, I. M. M., Águas, H. M. B., Fortunato, E. M. C. & Martins, R. F. D. P., 15 Jun 2004, In: Journal of Non-Crystalline Solids. 338-40, NA, p. 206-210

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Electric space charge 100%
  • Space Charge 96%
  • Density of State 80%
  • silicon films 80%
  • space charge 65%
  11 Citations (Scopus)

• Composition, structure and optical characteristics of polymorphous silicon films deposited by PECVD at 27.12 MHz

  Martins, R. F. D. P., Águas, H. M. B., Ferreira, I. M. M., Fortunato, E. M. C. & Roca i Cabarrocas, P., 1 Jan 2004, In: Advanced Materials Forum Iii, Pts 1 And 2. 455-456, NA, p. 100-103 4 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access
  1 Citation (Scopus)

• Detection limits of a nip a-Si: H linear array position sensitive detector

  Martins, R., Costa, D., Águas, H., Soares, F., Marques, A., Ferreira, I., Borges, P. & Fortunato, E., 2004, In: MRS Proceedings. 808, p. 507-512 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Pulsed lasers 100%
  • Amorphous Silicon 98%
  • Cutoff frequency 84%
  • Detectors 56%
  • Amorphous silicon 49%

• Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si : H MIS photodiodes

  Águas, H. M. B., Pereira, L. M. N., Ferreira, I. M. M., Ramos, A. R. L., Viana, A. S., Andreu, J., Vilarinho, P., Fortunato, E. M. C. & Martins, R. F. D. P., 15 Jun 2004, In: Journal of Non-Crystalline Solids. 338-40, 1 SPEC. ISS., p. 810-813 4 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Photodiodes 100%
  • MIS (semiconductors) 89%
  • Annealing 79%
  • photodiodes 73%
  • Semiconductor materials 71%
  2 Citations (Scopus)

• Effect of annealing on gold rectifying contacts in amorphous silicon

  Águas, H. M. B., Pereira, L. M. N., Ferreira, I. M. M., Ramos, A. R. L., Viana, A. S., Andreu, J., Vilarinho, P., Fortunato, E. M. C. & Martins, R. F. D. P., 1 Jan 2004, In: Advanced Materials Forum Iii, Pts 1 And 2. 455-456, NA, p. 96-99 4 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access
  2 Citations (Scopus)

• Effect of the discharge frequency and impedance on the structural properties of polymorphous silicon

  Águas, H. M. B., Raniero, L., Pereira, L. M. N., Fortunato, E. M. C. & Martins, R. F. D. P., 22 Mar 2004, In: Thin Solid Films. 451-52, NA, p. 264-268 5 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Structural properties 100%
  • Plasmas 84%
  • Silicon 72%
  • impedance 70%
  • Acoustic impedance 67%
  6 Citations (Scopus)

• Effect of the tunnelling oxide growth by H2O2 oxidation on the performance of a-Si : H MIS photodiodes

  Águas, H. M. B., Pereira, L. M. N., Silva, R. J. C., Fortunato, E. M. C. & Martins, R. F. D. P., 15 Jun 2004, In: Materials Science And Engineering B-Advanced Functional Solid-State Materials. 109, 1-3, p. 256-259 4 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Photodiodes 100%
  • MIS (semiconductors) 89%
  • Tunneling 81%
  • photodiodes 73%
  • Semiconductor materials 71%

• Effect of the tunnelling oxide thickness and density on the performance of MIS photodiodes

  Águas, H. M. B., Goullet, A., Pereira, L. M. N., Fortunato, E. M. C. & Martins, R. F. D. P., 22 Mar 2004, In: Thin Solid Films. 451-52, NA, p. 361-365 5 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Photodiodes 100%
  • MIS (semiconductors) 89%
  • Tunneling 81%
  • photodiodes 73%
  • Semiconductor materials 71%
  3 Citations (Scopus)

• Flexible position sensitive photodetectors based on a-Si: H hetero structures

  Fortunato, E. M. C., Pereira, L. M. N., Aguas, H., Ferreira, I. & Martins, R. F. D. P., 1 Jan 2004, In: Sensors and Actuators A: Physical. 116, 1, p. 119-124 6 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Amorphous Silicon 100%
  • Photodetectors 95%
  • Photocurrents 71%
  • Photocurrent 68%
  • Amorphous silicon 67%
  6 Citations (Scopus)

• Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz

  Raniero, L., Martins, R. F. D. P., Águas, H. M. B., Ferreira, I. M. M., Pereira, L. M. N. & Fortunato, E. M. C., 1 Jan 2004, In: Advanced Materials Forum Iii, Pts 1 And 2. 455-456, NA, p. 532-535 4 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access
  1 Citation (Scopus)

• High field-effect mobility zinc oxide thin film transistors produced at room temperature

  Fortunato, E. M. C., Pimentel, A. C. M. B. G., Pereira, L. M. N., Gonçalves, A., Lavareda, G. L., Aguas, H., Ferreira, I., Carvalho, N. & Martins, R. F. D. P., 15 Jun 2004, In: Journal of Non-Crystalline Solids. 338-340, 1 SPEC. ISS., p. 806-809 4 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Zinc oxide 100%
  • Thin film transistors 96%
  • Oxide films 93%
  • Field Effect 74%
  • Zinc Oxide 73%
  148 Citations (Scopus)