Research Output per year
Personal profile
Research interests
I did my Ph.D research in Electronics at University of Algarve (2010-2013) under the supervision of Prof. Henrique L. Gomes in collaboration with Philips Research Laboratories, Prof. D. M (Dago) De Leeuw and Prof. S. C. J. Meskers from Eindhoven University of Technology, Netherlands. During my graduate research, I developed a tremendous interest and passion for research in the area of resistive switching memories (memristor devices) from fabrication to electrical characterization. Investigating the operating mechanism of different device structures by applying novel experimental set-ups sheds light on the physics of the memristor technology. The project was ended on schedule, within scope, and was of high quality. After my Ph.D graduation I received a Post-Doc grant from FCT in the area of physics and joined the group of Prof. Pedro Barquinha at i3N/CENIMAT of Universidade NOVA de Lisboa. My work is concentrated on instability mechanisms of thin-film oxide transistors for display application. Since 2015, CENIMAT provides me the opportunity to continue working on memristor-based devices by supervising master students and a PhD student. Currently, I am lecturing a course on electronic information storage entitled Gravação Eletrónica de Informação for master students (physics, nanotechnology, and electronics). The entire course content (theory and practical) was provided by me and Dr. Joana Vaz Pinto.
Education/Academic qualification
Electronics, Doctorate, Universidade do Algarve
1 Oct 2009 → 17 Dec 2013
Keywords
- QC Physics
- TK Electrical engineering. Electronics Nuclear engineering
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Research Output at NOVA
Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion
Ambrosi, E., Bartlett, P., Berg, A. I., Brivio, S., Burr, G., Deswal, S., Deuermeier, J., Haga, M. A., Kiazadeh, A., Kissling, G., Kozicki, M., Foroutan-Nejad, C., Gale, E., Gonzalez-Velo, Y., Goossens, A., Goux, L., Hasegawa, T., Hilgenkamp, H., Huang, R., Ibrahim, S. & 18 others, , 1 Feb 2019, In : Faraday Discussions. 213, p. 115-120 6 p.Research output: Contribution to journal › Comment/debate
Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device
Deuermeier, J., Kiazadeh, A., Klein, A., Martins, R. & Fortunato, E., 19 Feb 2019, In : Nanomaterials. 9, 2, 289.Research output: Contribution to journal › Article
Synaptic and neuromorphic functions: General discussion
Berg, A. I., Brivio, S., Brown, S., Burr, G., Deswal, S., Deuermeier, J., Gale, E., Hwang, H., Ielmini, D., Indiveri, G., Kenyon, A. J., Kiazadeh, A., Köymen, I., Kozicki, M., Li, Y., Mannion, D., Prodromakis, T., Ricciardi, C., Siegel, S., Speckbacher, M. & 5 others, , 1 Feb 2019, In : Faraday Discussions. 213, p. 553-578 26 p.Research output: Contribution to journal › Comment/debate
Valence change ReRAMs (VCM) - Experiments and modelling: General discussion
Aono, M., Baeumer, C., Bartlett, P., Brivio, S., Burr, G., Burriel, M., Carlos, E., Deswal, S., Deuermeier, J., Dittmann, R., Du, H., Gale, E., Hambsch, S., Hilgenkamp, H., Ielmini, D., Kenyon, A. J., Kiazadeh, A., Kindsmüller, A., Kissling, G., Köymen, I. & 14 others, , 1 Jan 2019, In : Faraday Discussions. 213, p. 259-286 28 p.Research output: Contribution to journal › Comment/debate
Critical role of a double-layer configuration in solution-based unipolar resistive switching memories
Carlos, E., Kiazadeh, A., Deuermeier, J., Branquinho, R., Martins, R. & Fortunato, E., 19 Jun 2018, In : Nanotechnology. 29, 34, 345206.Research output: Contribution to journal › Article